JY12M N And P Chennel 30V MOSFET With Fast Switching Speed For Inverter Applications
General Description
The JY12M is a type of power field transistor designed in both N and P Channel logic enhancement mode. These transistors are manufactured using a high cell density DMOS trench technology, which enables excellent performance characteristics. The high density process of the fabrication technique is specifically optimized to minimize on-state resistance, leading to enhanced efficiency.
These power transistors are particularly well-suited for low voltage applications, such as power management in cellular phones, notebook computers, and other battery-powered circuits. They excel in situations where high-side switching and minimal power loss are crucial requirements. Additionally, the JY12M is designed in a very small outline surface mount package, allowing for compact and space-efficient integration into electronic systems.
In summary, the JY12M power field transistors utilize high cell density DMOS trench technology, resulting in reduced on-state resistance. They are highly suitable for low voltage applications, especially in scenarios where efficient high-side switching and minimal power loss are essential. The compact surface mount package further enhances their versatility and integration capabilities.
Data sheet: JY12M.pdf
Features
● Low Input Capacitance
● Fast Switching Speed
Application
● Power Management
● DC/DC Converter
● DC Motor Control
● LCD TV & Monitor Display Inverter
● CCFL inverter
PIN Configuration
SOP-9 Package Outline
Pictures
