The JY4N8M utilizes the latest trench processing techniques to achieve the high cell density and reduces the on‐resistance with low gate charge. These features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of other applications. Get more details please click here.
Features
● 40V/80A, RDS(ON) ≤6.5mΩ@VGS=10V ● Fast switching and reverse body recovery ● Fully characterized avalanche voltage and current ● Excellent package for good heat dissipation
Applications
● Hard switched and high frequency circuits ● Power Management for Inverter Systems