Changzhou Bextreme Shell Motor Technology Co.,Ltd

Professional BLDC motor products manufacturer and solution supplier!

Manufacturer from China
Verified Supplier
5 Years
Home / Products / BLDC Motor Driver IC /

JY13M 40V Surface Mount N And P Channel Power Mosfet Driver Ic Chip

Contact Now
Changzhou Bextreme Shell Motor Technology Co.,Ltd
Visit Website
City:changzhou
Province/State:jiangsu
Country/Region:china
Contact Person:MrAmigo Deng
Contact Now

JY13M 40V Surface Mount N And P Channel Power Mosfet Driver Ic Chip

Ask Latest Price
Video Channel
Brand Name :JUYI
Model Number :JY13M
MOQ :1 set
Packaging Details :PE bag+ carton
Place of Origin :China
Price :Negotiable
Delivery Time :5-10 days
Payment Terms :T/T,L/C,Paypal
Supply Ability :1000sets/day
Drain-Source Voltage :40 V
Gate-Source Voltage :±20V
Maximum Power Dissipation :2W
Pulsed Drain Current :30A
Fast Switching Speed :Yes
Shape :Square
more
Contact Now

Add to Cart

Find Similar Videos
View Product Description

JY13M N and P Channel 40V MOSFET for BLDC motor driver


GENERAL DESCRIPTION


The JY13M is the N and P Channel logic enhancement mode power field transistors
Which can provide excellent RDS(ON) and low gate charge. The complementary
MOSFETs may be used in H-bridge, Inverters and other applications.


FEATURES

Device VBR(DSS) RDS(ON) MAX TJ=25ºC Package
N-Channel 40V <30mΩ@VGS=10V,ID=12A TO252-4L
<40mΩ@VGS=4.5V,ID=8A
P-Channel -40V <45mΩ@VGS=-10V,ID=-12A
<66mΩ@VGS=-4.5V,ID=-8A


● Low Input Capacitance
● Fast Switching Speed

Absolute Maximum Ratings(Ta=25ºC Unless Otherwise Noted)

Parameter Symbol N Channel P Channel Unit
Drain Source Voltage VDSS 40 -40 V
Gate Source Voltage VDSS ±20 ±20
Continuous
Drain Current
Ta=25ºC ID 12 -12 A
Ta=100ºC 12 -12
Pulsed Drain Current IDM 30 -30
Maximum Power
Dissipation
Ta=25ºC PD 2 W
Ta=70ºC 1.3
Junction and Storage
Temperature Range
TJ TSTG -55 to 150 ºC
Thermal Resistance
Junction to Ambient
RθJA 10s 25 ºC/W
Steady 60
Thermal Resistance
Junction to Case
RθJC 5.5 5 ºC/W


Electrical Characteristics(Ta=25ºC Unless Otherwise Noted)

Symbol Parameter Conditions Min Typ Max Unit
Static
VGS(th) Gate Threshold
Voltage
VDS=VGS,ID=250uA N-Ch 1.7 2.5 3.0 V
VDS=VGS,ID=-250uA P-Ch -1.7 -2 -3.0
IGSS Gate Leakage
Current
VDS=0V, VGS=±20V N-Ch ±100 nA
P-Ch ±100
IDSS Zero Gate Voltage
Drain Current
VDS=40V, VGS=0V N-Ch 1 uA
VDS=-40V, VGS=0V P-Ch -1
ID(ON) On-State Drain
Current
VDS=5V, VGS=10V N-Ch 30 A
VDS=-5V, VGS=-10V P-Ch -30
RDS(ON) Drain-Source
On-State
Resistance
VGS=10V,ID=12A N-Ch 24 30
VGS=-10V,ID=-12A P-Ch 36 45
VGS=4.5V,ID=8A N-Ch 31 40
VGS=-4.5V,ID=-8A P-Ch 51 66
VSD Diode Forward
Voltage
IS=1.0A,VGS=0V N-Ch 0.76 1.0 V
IS=-1.0A,VGS=0V P-Ch -0.76 -1.0

JY13M 40V Surface Mount N And P Channel Power Mosfet Driver Ic Chip

DOWNLOAD JY13M USER MANUAL

JY13M 40V Surface Mount N And P Channel Power Mosfet Driver Ic ChipJY13M.pdf

Inquiry Cart 0